L波段雷达的GaN HEMT提供800W脉冲功率
文章：格雷厄姆先知
CGHV14800 GaN HEMT具有高效率，高增益和宽带宽度功能，适用于L波段雷达放大器应用。
Gan-On-SIC高电子移动晶体管（HEMTS）制造商WOLFSPEED将释放最高功率50V GaN HEMT，迄今为止 - 其900W CGHV14800 GaN HEMT用于L波段雷达应用。
CGHV14800具有优于65％的脉冲功率，可在1.2 - 1.4GHz和50V操作中提供800W的脉冲功率，CGHV14800具有高效率，高增益和宽带宽度功能，适用于L波段雷达放大器应用，包括：空中交通管制（ATC）雷达，渗透雷达，反引导系统雷达，目标跟踪雷达和远程监控雷达。
内部匹配输入和输出，900W，50V GaN HEMT也表现出14dB功率增益和<0.3dB脉冲幅度下垂。WOLFSPEED的CGHV14800供应在陶瓷/金属法兰包装中，可单独发货，或者在测试板上安装或安装在旁边。
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices claim higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. In addition to L-Band radar power amplifiers, Wolfspeed said its GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.